AMDp1 - 5
نویسندگان
چکیده
Threshold voltage shift ( Vth) characteristics of amorphous InGaZnO thin-film transistors under positive gate bias stress are investigated and the monitoring Vth from constant current induced drain voltage is proposed. The extracted Vth characteristics are then analyzed using the stretched exponential model and the characteristics of the subgap density of states.
منابع مشابه
(P\351rez Ariza, C. \(2007\). El ...)
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تاریخ انتشار 2013